6
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
TYPICAL CHARACTERISTICS
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
22
1
0
60
10
18
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
17
16
1000 10000
Gps
20
19
21
100
10
VDD
=50Vdc
IDQ
= 150 mA
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
21.5
500
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
700 800 900 1000
G
ps
, POWER GAIN (dB)
P3dB = 1182 W (60.7 dBm)
Actual
Ideal
VDD
=50Vdc
IDQ
= 150 mA
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
17
25
10
20
19
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
18
IDQ
= 6000 mA
1000 10000
1500 mA
150 mA
375 mA
750 mA
21
22
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
VDD
=30V
23
0
16
35 V
20
45 V
200 400 600 800 1000 1200 1400
50 V
40 V
18
Note:
Each side of device measured separately.
20
22
600
P1dB = 1065 W (60.3 dBm)
3000 mA
22
17
19
21
IDQ
= 150 mA, f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
45
40
65
20
25_C
30 4035
25
55
50
Pin, INPUT POWER (dBm) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P
out
, OUTPUT POWER (dBm)
60
45
VDD
=50Vdc
IDQ
= 150 mA
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
16
23
24
VDD
=50Vdc
f = 1030 MHz
Pulse Width = 128
μsec
Duty Cycle = 10%
85_C
TC
=--30_C
1300
1200
1100
21
20.5
20
19.5
19
18.5
18
1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6VP21KHR6
MOSFET RF N-CH 1000W NI1230
MRF6VP2600HR6
MOSFET RF N-CH 600W NI1230
MRF6VP3091NBR1
MOSFET RF 50V 350MA TO272-4
MRF6VP3450HR6
MOSFET RF N-CH 450W NI-1230
MRF6VP41KHSR7
MOSFET RF N-CH 1000W NI1230S
MRF7P20040HSR5
MOSFET RF N-CH 40W NI780HS-4
MRF7S15100HR5
MOSFET RF N-CH 28V 23W NI780
MRF7S16150HSR5
MOSFET RF N-CH NI-780S
相关代理商/技术参数
MRF6VP21KHR5
功能描述:射频MOSFET电源晶体管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6VP21KHR6
功能描述:射频MOSFET电源晶体管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6VP21KHR6_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600HR5
功能描述:射频MOSFET电源晶体管 VHV6 600W 225MHZ NI1230
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6VP2600HR5-CUT TAPE
制造商:Freescale 功能描述:MRF6VP2600HR6 Series 10 - 250 MHz 110 V N-Channel RF Power Mosfet
MRF6VP2600HR6
功能描述:射频MOSFET电源晶体管 VHV6 600W 225MHZ NI1230
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6VP2600HR6_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET